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?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc april 2013 FBA42060 pfc spm ? 45 series for 1-phase boost pfc features ? low thermal resistance thanks to ceramic sub- strate ? 600 v - 20 a 1-phase boost pfc including a drive ic for gate driving and protection ? typical switching frequency of 20 khz ? open emitter terminal for igbt current sensing ? built-in ntc thermistor fo r monitoring over-tempera- ture ? isolation rating of 2000 vrms/min. applications ? 1-phase boost pfc converter for air conditioner general description FBA42060 is a pfc spm 45 series for 1-phase boost pfc(power factor correction) that fairchild has newly developed for low-power application such as air condi- tioner. it combines optimized circuit protections and drive ic matched to high frequency switching igbt. the system reliability is fu rther enhanced by the inte- grated under-voltage lock-out and over-current pro- tection function. related source ? will be released package marking & ordering information figure 1. package overview device marking device package packing ty pe reel size tape width quantity FBA42060 FBA42060 s26ac-023 rail - - 12
?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc integrated drive, protectio n and system control functions ? for igbts : gate drive circuit, over current(oc) protec tion, control supply circuit under-voltage(uv) protection ? fault signal : corresponding to oc and uv fault ? built-in thermistor: over-temperature monitoring ? input interface : active-high interface, can work with 3.3 / 5 v logic pin configuration figure 2. top view v th (1) r th (2) s (3) r (4) p r (5) l (6) p (7) n.c (8) n.c (9) (26) n r (25) n r (24) n r (23) n r (22) n (21) n (20) n.c (19) n.c (18) n.c (17) com (15) com (16) v cc (13) in (14) com (12) n.c (11) v fo (10) c sc
?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc pin descriptions internal equivalent circuit figure 3. internal block diagram pin number pin name pin description 1v th thermistor bias voltage 2r th series resistor for the use of thermistor 3 s ac input for s phase 4 r ac input for r phase 5p r positive dc-link of rectifier 6 l inductor connection 7 p positive dc-link input 8,9 n.c - 10 c oc signal input for over current detection 11 v fo fault output 12 n.c - 13 in pwm input for igbt drive 14 com common supply ground 15 com common supply ground 16 v cc common supply voltage of ic for igbt drive 17 com common supply ground 18~20 n.c - 21,22 n negative dc-link input 23~26 n r negative dc-link of rectifier diode csc vfo in com vcc out (1)v th (2)r th (10)c sc (11)v fo (13)in (14)(15)(17)com (16)vcc (7)p (3)s (4)r (23)(24)(25)(26)n r ntc thermistor (5)p r (6)l (21)(22)n
?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc absolute maximum ratings converter part control part total system thermal resistance symbol parameter conditions rating unit v i input supply voltage applied between r-s 276 v v i(surge) input supply voltage (surge) applied between r-s 500 v v pn output voltage applied between p r -n r 450 v v pn(surge) output supply voltage (surge) applied between p r -n r 500 v v ces collector-emitter voltage 600 v v rrm repetitive peak reverse voltage 600 v i c each igbt collector current t c = 25c, v cc = 15 v 20 a i cp each igbt collector current(peak) t c = 25c, under 1 ms pulse width 30 a i fsm peak forward surge current single half sine-wave 200 a t j operating junction temperature -40 ~ 150 c symbol parameter conditions rating unit v cc control supply voltage applied between v cc - com 20 v v in input signal voltage applied between in - com -0.3 ~ v cc + 0.3 v v fo fault output supply voltage applied between v fo - com -0.3 ~ v cc + 0.3 v i fo fault output current sink current at v fo pin 1 ma v sc current sensing input voltage applied between c sc - com -0.3 ~ v cc + 0.3 v symbol parameter conditions rating unit t stg storage temperature - 40 ~ 125 c v iso isolation voltage 60 hz, sinusoi dal, ac 1 minute, connection pins to heat sink plate 2000 v rms symbol parameter condition min. typ. max. unit r th(j-c)q junction to case thermal resistance at chip center igbt - - 2.5 c/w r th(j-c)d frd - - 2.5 c/w r th(j-c)r rectifier - - 2.5 c/w
?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc electrical characteristics (t j = 25c, unless otherwise specified) converter part note: 1. t on and t off include the propagation delay time of the internal drive ic. t c(on) and t c(off) are the switching time of igbt itself under the given gate driving condition internally. for the detailed information, please see figure 4. figure 4. switching time definitions symbol parameter conditions min. typ. max. unit v ce(sat) igbt collector-emitter saturation voltage v cc = 15 v, v in = 5v, i c = 20 a - 2.2 2.7 v v ff frd forward voltage i f = 20 a - 2.1 2.6 v v fr rectifier forward voltage i f = 20 a - 1.1 1.4 v t on switching characteristic v pn = 300 v, v cc = 15 v, i c = 20 a, v in = 0 v ? 5 v, inductive load (note 1) - 770 - ? s t off - 640 - ? s t c(on) - 130 - ? s t c(off) -50- ? s trr -40- ? j irr -4.0- ? j i ces collector-emitter leakage current v ce = v ces --1ma
?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc control part note: 2. over-current protection is functioning on igbt. 3. t th is the temperature of thermister itself. to know case temperature(tc), please make the experiment considering your application . . figure 5. r-t curve of the built-in thermistor symbol parameter conditions min. typ. max. unit i qcc quiescent v cc supply current v cc = 15 v, v in = 0v, v cc - com - - 2.65 ma v foh fault output voltage v sc = 0 v, v fo circuit: 4.7 k ? to 5 v pull-up 4.5 - - v v fol v sc = 1 v, v fo circuit: 4.7 k ? to 5 v pull-up - - 0.8 v v sc(ref) over-current protection trip level voltage of c sc pin v cc = 15 v (note 2) 0.45 0.5 0.55 v uv ccd supply circuit under- voltage protection detection level 10.5 13.0 v uv ccr reset level 11.0 13.5 v v in(on) on threshold voltage applied between in - com - - 2.6 v v in(off) off threshold voltage 0.8 - - v r th resistance of thermistor t th = 25c (note 3) - 47.0 - k ? t th = 100c -2.9-k ? 0255075100125 0 50 100 150 200 min typ max r-t curve resistance r th [k ? ] temperature t th [degc] 95 100 105 110 115 120 125 1 2 3 4 min typ max resistance r th [k ? ] temperature t th [degc]
?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc recomended oper ating conditions note: 4. the pfc spm ? product might not make response if input pulse width is less than the recommended value. mechanical characteristics and ratings figure 6. flatness measurement position symbol parameter conditions value units min. typ. max. v i input supply voltage applied between r - s 198 220 242 v rms v pn supply voltage applied between p r - n - 360 400 v i i input current v dc = 360 v, f sw = 20 khz, v cc = 15 v, t c = 90c, t j 150c -20-a peak v cc supply voltage for inverter applied between v cc - com 13.51516.5 v p win(on) minimum input pulse width (note 4) 0.5 - - ? s p win(off) 0.5 - - ? s dv cc /dt supply variation -1 - 1 v/ ? s f pwm pwm input frequency t j 150c - 20 - khz v sen voltage for current sensing applied between n - com (including surge voltage) -4 - 4 v parameter conditions limits units min. typ. max. mounting torque mounting screw: m3 recommended 0.7 n?m 0.6 0.7 0.8 n?m device flatness refer to figure 6 0 - +120 ? m weight -11- g
?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc time charts of pfc spm ? s protective function a1 : control supply voltage rises: after the voltage rises uv ccr , the circuits start to operate when the next input is applied. a2 : normal operation: igbt on and carrying current. a3 : under voltage detection (uv ccd ). a4 : igbt off in spite of control input condition. a5 : fault output operation starts. a6 : under voltage reset (uv ccr ). a7 : normal operation: igbt on and carrying current. figure 7. under-voltage protection input signal output current fault output signal control supply voltage reset uv ccr protection circuit state set reset uv ccd a1 a3 a2 a4 a6 a5 a7
?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc (with the external shunt resistance and cr connection) c1 : normal operation: igbt on and carrying current. c2 : over current detection (oc trigger). c3 : hard igbt gate interrupt. c4 : igbt turns off. c5 : fault output timer operation starts. c6 : input ?l? : igbt off state. c7 : input ?h?: igbt on state, but during the acti ve period of fault output the igbt doesn?t turn on. c8 : igbt off state figure 8. over current protection internal igbt gate-emitter voltage igbt control input output current sensing voltage of the shunt resistance fault output signal sc reference voltage cr circuit time constant delay oc protection circuit state set reset c6 c7 c3 c2 c1 c8 c4 c5
?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc recommand circuit for application note: 1. to avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. v fo output is open collector type. this signal line should be pulled up to the positive side of the 5v power supply with approxima tely 4.7k resistance. 3. input signal is high-active type. there is a 3.3 k resistor inside the ic to pull down each input signal line to gnd. when employing rc coupling circuits, set up such rc couple that input signal agree with turn-off/turn-on threshold voltage. 4. to prevent errors of the protection function, the wiring around r f and c sc should be as short as possible. 5. in the over current protection circuit, please select the r f , c sc time constant in the range 1~2 s. 6. each capacitors should be mounte d as close to the pins as possible. 7. relays are used at almost every systems of electrical equipmen ts of home appliances. in these cases, there should be suffic ient distance between the cpu and the relays. 8. internal ntc thermistor can be used for monitoring the case temperature and protecting the device from the overheating oper ation. please select an appropriate resistor rth according to the application. for example, use r th =4.7 k that will make the voltage across r th to be 2.5v at 85c of the case temperature. 9. please use an appropriate shunt resistor r sh to protect the intenal igbt from the overcurrent operation. 10. it?s recommended that anti-parallel diode should be connected with igbt. figure 9. typical a pplication circuit controller +5v +15v +5v csc vfo in com vcc out v th r th c sc v fo in com v p n ntc thermistor l p r s n v ac c sc r f current sensing v dc r fo r r r sh cc r th
?2012 fairchild semiconductor corporation 11 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc detailed package outline drawings dimension unit: millimeter
?2012 fairchild semiconductor corporation 12 www.fairchildsemi.com FBA42060 rev. c1 FBA42060 pfc spm? 45 series for 1-phase boost pfc

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